smbta 56 1 oct-14-1999 pnp silicon af transistor ? high breakdown voltage ? low collector-emitter saturation voltage ? complementary type: smbta 06 (npn) 1 2 3 vps05161 type marking pin configuration package smbta 56 s2g 1=b 2=e 3=c sot-23 maximum ratings parameter symbol value unit collector-emitter voltage v ceo v 80 collector-base voltage v cbo 80 emitter-base voltage v ebo 4 dc collector current ma 500 i c peak collector current i cm 1 a base current ma 100 i b peak base current i bm 200 total power dissipation , t s = 79 c p tot 330 mw junction temperature t j 150 c storage temperature t st g -65 ... 150 thermal resistance k/w junction ambient 1) r thja 285 junction - soldering point r thjs 215 1) package mounted on pcb 40mm x 40mm x 1.5mm / 6cm 2 cu
smbta 56 2 oct-14-1999 electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage i c = 1 ma, i b = 0 v (br)ceo 80 - - v collector-base breakdown voltage i c = 100 a, i b = 0 v (br)cbo 80 - - emitter-base breakdown voltage i e = 10 a, i c = 0 v (br)ebo 4 - - collector cutoff current v cb = 80 v, i e = 0 i cbo - - 100 na collector cutoff current v cb = 80 v, i e = 0 , t a = 150 c i cbo - - 20 a collector cutoff current v ce = 60 v, i b = 0 100 na - i ceo - - - - - - 100 100 h fe dc current gain 1) i c = 10 ma, v ce = 1 v i c = 100 ma, v ce = 1 v collector-emitter saturation voltage1) i c = 100 ma, i b = 10 ma v cesat - - 0.25 v base-emitter voltage 1) i c = 100 ma, v ce = 1 v v be(on) - - 1.2 ac characteristics transition frequency i c = 20 ma, v ce = 5 v, f = 20 mhz f t - 100 - mhz collector-base capacitance v cb = 10 v, f = 1 mhz c cb - 12 - pf 1) pulse test: t 300 s, d = 2%
smbta 56 3 oct-14-1999 total power dissipation p tot = f ( t a *; t s ) * package mounted on epoxy 0 0 ehp00845 a t 150 50 100 ?c p tot t s ; t a s t 100 200 300 mw 400 collector current i c = f ( v be ) v ce = 1v ehp00846 10 0 v be 1.5 c 10 3 1 10 -1 5 0.5 1.0 10 0 5 v ma 5 10 2 100 c 25 c -50 c permissible pulse load p totmax / p totdc = f ( t p ) 10 ehp00847 -6 0 10 5 d = 5 10 1 10 2 3 10 10 -5 10 -4 10 -3 10 -2 10 0 s 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 t p = d t t p t tot max tot p dc p p t transition frequency f t = f ( i c ) v ce = 5v 10 ehp00848 03 10 ma 1 10 3 10 5 5 10 1 10 2 10 2 c t f mhz 55
smbta 56 4 oct-14-1999 collector-emitter saturation voltage i c = f ( v cesat ), h fe = 10 0.0 10 ehp00850 cesat v 0 3 10 c ma 1 10 2 10 c 5 5 100 25 c -50c 0.5 v 1.0 base-emitter saturation voltage i c = f (v besat ), h fe = 10 ehp00849 10 0 v besat 1.5 c 10 3 1 10 -1 5 0.5 1.0 10 0 5 v ma 5 10 2 100 ? c 25 ? c -50 ? c dc current gain h fe = f ( i c ) v ce = 1v ehp00852 10 h c fe 10 1 10 -1 0 100 c 25 c -50 c 1 10 2 10 3 10 ma 2 10 3 10 0 10 collector cutoff current i cbo = f ( t a ) v cb = 80v ehp00851 10 0 c a 150 na cbo 10 4 1 10 -1 5 50 100 5 10 2 10 0 5 t max typ 5 10 3
|
